Search results for "Silicon MOS inversion layer"

External Noise Effects in Silicon MOS Inversion Layer

2013

The effect of the addition of an external source of correlated noise on the electron transport in silicon MOS inversion layer, driven by a static electric field, has been investigated. The electron dynamics is simulated by a Monte Carlo procedure which takes into account non-polar optical and acoustic phonons. In our modelling of the quasi-two-dimensional electron gas, the potential profile, perpendicular to the MOS structure, is assumed to follow the triangular potential approximation. We calculate the changes in both the autocorrelation function and the spectral density of the velocity fluctuations, at different values of noise amplitude and correlation time. The findings indicate that, t…